Toward More Stable Quantum Dot Light-Emitting Diodes
作者：Y. Chen, W. Li, W. Yang
關(guān)鍵字：degradation mechanism, operational stability, quantum dot light-emitting diodes
論文來(lái)源：期刊
發(fā)表時(shí)間：2025年
Quantum dot (QD) light-emitting diodes (QLEDs) have emerged as a leading technology for next-generation displays due to their exceptional color purity, tunable emission, and solution-processability. However, their operational stability remains a significant challenge for viability. A series of degradation paths induced by charge imbalance, physicochemical degradation at interface and interfacial materials, as well as the deterioration of QD materials under external fields, are discussed. Significant progress in interface and material engineering strategies is critically evaluated, while innovative device architectures and patterning fabrication schemes are discussed. Finally, this review concludes by summarizing the established mechanistic framework and presenting forward-looking perspectives on the deeper research and cross-disciplinary integration required to overcome the bottlenecks for stability and even commercialization.