Abnormal I-V characteristics and metal-insulator transition of Fe-doped amorphous carbon/silicon p-n junction
writer：Lanzhong Hao, Qingzhong Xue （*）, Xili Gao, Qun Li, Qingbin Zheng, and Keyou Yan
keywords：Fe-doped amorphous carbon/silicon junction
source：期刊
specific source：JOURNAL OF APPLIED PHYSICS 101, 053718， （2007）
Issue time：2007年
Simple p-C/n-Si junctions have been fabricated by magnetron sputtering at room temperature and their current-voltage （I-V） characteristics have been investigated. The p-n junctions show good rectifying properties in a large voltage scope and interesting I-V characteristics. The most interesting
phenomenon observed in these p-n junctions is that the temperature dependence of some junction resistance shows a metal-insulator transition whose transition temperature is hugely modulated from 162 to 236 K by a bias voltage increasing from 20 to 40 V. This work shows that amorphous carbon films combined with other semiconductor materials can result in some interesting properties that may have potential applications.