Effect of gas pressure on current-voltage characteristics of amorphous carbon film/silicon heterojunction
作者：Xili Gao, Qingzhong Xue(*), Lanzhong Hao, Qun Li, Qingbin Zheng, and Ping Tian
關鍵字：carbon/silicon heterojunctions
論文來源：期刊
具體來源：APPLIED PHYSICS LETTERS 91, 092104,2007
發表時間：2007年
Amorphous carbon film/n-Si (a-C/Si) junctions have been fabricated by direct current magnetron sputtering and their current-voltage (I-V) characteristics have been investigated. The results show that the gas pressure has a large effect on the reverse bias I-V characteristics of the junctions. For example, the reverse current can increase by 3300% when the gas pressure decreases from
100 000 to 100 Pa. The effect of gas pressure may be attributed to the physisorption process of gas molecules which increases the space charge width and changes the surface states of the junction.